石墨烯场效应管芯片

Description

Device configuration:This Graphene FET chip provides 36 graphene devices distributed in a grid pattern on the chip. 30 devices have Hall-bar geometry and 6 have 2-probe geometry.The Hall-bar devices can be used for Hall measurements as well as 4-probe and 2-probe measurements. There are graphene channels with varied dimensions to allow systematic investigation of device properties.Graphene FET chip (GFET-S10 chip) is a graphene based field effect transistor chip with a symmetric transconductance of 8 μS and an operational current density of 105 A/cm2. The fabricated device has a monolayered graphene which is coated by chemical vapor deposition (CVD) on silicon substrate. It also has similar gate insulators in the source and drain.GFET-S10 chip can be used as a biosensor and a chemical sensor for biological applications.Graphene device researchFET based sensor research for active materials deposited on grapheneChemical sensorsBiosensorsBioelectronicsMagnetic sensorsPhotodetectors